Model: JANSG2N7270

Transistor

Special Features:

Esd sensitive and radiation hardened

Properties:

Inclosure Material
Ceramic
Overall Length
Between 1.300 inches and 1.370 inches
End Application
Kg-207
Mounting Facility Quantity
2
Mounting Method
Terminal and unthreaded hole
Features Provided
Radiation hardened
Criticality Code Justification
Feat
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
500.0 breakdown voltage, collector-to-emitter, base open and 2.0 gate to source threshold voltage and 4.0 gate to source threshold voltage
Nuclear Hardness Critical Feature
Hardened
Terminal Type And Quantity
3 uninsulated wire lead and 1 unthreaded hole
NSN
5961-01-480-4448
Part Number
JANSG2N7270
Description
Transistor
CAGE
81349

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part JANSG2N7270 NSN 5961-01-480-4448

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
M

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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