Model: JAN2N5955

Transistor

Special Features:

Same as 2n5955 but with different quality level; junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.340 inches
Overall Diameter
0.620 inches
End Application
662-15-064-3505 test set electronics systems x925-501
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Unthreaded hole
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
70.0 breakdown voltage, collector-to-base, emitter open and 5.0 breakdown voltage, emitter-to-base, collector open and 65.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
6.00 amperes source cutoff current and 2.00 amperes source cutoff current
Power Rating Per Characteristic
40.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
1 case and 2 pin
NSN
5961-01-469-0533
Part Number
JAN2N5955
Description
Transistor
CAGE
81349

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part JAN2N5955 NSN 5961-01-469-0533

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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