Model: JAN2N2015

Transistor
Description:

Metal inclosure material, 0.520 inches overall length, 0.520 inches overall height, 1.250 inches overall diameter, 1 mounting facility quantity.

Properties:

Inclosure Material
Metal
Overall Length
0.520 inches
Overall Height
0.520 inches
Overall Diameter
1.250 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Internal Junction Configuration
Npn
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.190 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
100.0 collector to base voltage/static/emitter open and 100.0 collector to emitter voltage, dc with specified circuit between base and emitter and 50.0 collector to emitter voltage/static/base open and 10.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
6.00 amperes source cutoff current megahertz and 10.00 amperes source cutoff current
Current Rating Per Characteristic
6.00 amperes source cutoff current megahertz and 10.00 amperes collector current, dc
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector
Power Rating Per Characteristic
150.0 watts collector power dissipation
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Thread Series Designator
Unf
Terminal Type And Quantity
2 pin and 1 threaded stud
Specification Data
81349-mil-s-19500/248 government specification
NSN
5961-00-058-6280
Part Number
JAN2N2015
Description
Transistor
CAGE
81349

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part JAN2N2015 NSN 5961-00-058-6280

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.2000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
SPI No.:
SPI Rev.:
SPC Mkg:
99
LVL_A:
E
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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