Model: JAN2N1910

Thyristor Semiconductor Device

Special Features:

Internal junction configuration arrangement pnpn

Properties:

Inclosure Material
Metal
Overall Length
1.125 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Overall Width Across Flats
Between 1.031 inches and 1.062 inches
Thread Size
0.500 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
75.0 repetitive peak reverse voltage, peak total value and 35.0 reverse voltage, total rms and 50.0 reverse voltage, peak
Current Rating Per Characteristic
20.00 milliamperes source cutoff current preset
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector blank
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 2 uninsulated wire lead w/terminal lug
Specification Data
81349-mil-s-19500/204 government specification
NSN
5961-01-029-7519
Part Number
JAN2N1910
Description
Semiconductor Device,thyristor
CAGE
81349

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part JAN2N1910 NSN 5961-01-029-7519

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
SPI No.:
SPI Rev.:
SPC Mkg:
99
LVL_A:
E
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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