Model: JAN1N6610

Diode Semiconductor Device

Special Features:

T0-46 pkg; clear lens; yellow

Properties:

Inclosure Material
Metal
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
3.0 forward voltage, peak
Current Rating Per Characteristic
20.00 milliamperes service voltage megawatts
Power Rating Per Characteristic
120.0 watts any acceptable absolute
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius ambient air
NSN
5961-01-436-3484
Part Number
JAN1N6610
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JAN1N6610 NSN 5961-01-436-3484

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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