Model: JAN1N645-1

Semiconductor Device Rectifier

Special Features:

Description: 600mw power dissipation, 400ma avg. Forward rectified current, body length: 0.120-.200", lead dia. 0.018-.022", lead length: 1.0"

Properties:

Overall Length
Between 2.120 inches and 2.200 inches
Overall Diameter
Between 0.06 inches and 0.09 inches
Operating Tempurature Range
-65.0 to 175.0 degrees celsius
End Application
Ah-1 4 bladed rotor head upgrade, wiring integ assembly, wiring board assembly
Absolute Maximum Voltage Rating In Volts Per Characteristic
225.0 reverse voltage, average and 275.0 breakdown voltage, instantaneous
Part Name Assigned By Controlling Agency
Silicon rectifier diodes
Material
Glass
Terminal Type And Quantity
2 wire lead
NSN
5961-01-612-5657
Part Number
JAN1N645-1
Description
Rectifier,semiconductor Device
CAGE
01295

Two or more interconnected semiconductor device (1), diode arranged in stack(s) for use in power supplies to change alternating current to direct current. For items containing material such as selenium or copper oxide, see rectifier, metallic.

Part JAN1N645-1 NSN 5961-01-612-5657

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
00300
FIIG:
A503H0
Concept No.:
App. Key:
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541900000
  • SITC: 77688
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diode, transistor & similar semiconductor device parts

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