Model: JAN1N6064A

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
Between 7.4 millimeters and 9.1 millimeters
Overall Diameter
Between 5.5 millimeters and 6.0 millimeters
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
116.0 reverse breakdown voltage, dc and 94.0 working peak reverse voltage
Current Rating Per Characteristic
5.00 microamperes forward current, average peak
Terminal Type And Quantity
2 uninsulated wire lead
Specification Data
81349-mil-s-19500/507 government specification
NSN
5961-01-467-8144
Part Number
JAN1N6064A
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JAN1N6064A NSN 5961-01-467-8144

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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