Model: JAN1N5772

Unitized Semiconductor Devices

Properties:

Inclosure Material
Metal
Overall Length
0.290 inches
Terminal Length
Between 0.240 inches and 0.370 inches
Overall Height
Between 0.030 inches and 0.085 inches
Overall Width
Between 0.240 inches and 0.260 inches
Component Name And Quantity
8 semiconductor device diode
Mounting Method
Terminal
Terminal Circle Diameter
Between 0.010 inches and 0.019 inches
Semiconductor Material
Silicon all semiconductor device diode
Voltage Rating In Volts Per Characteristic
60.0 reverse breakdown voltage, dc all semiconductor device diode
Current Rating Per Characteristic
300.00 milliamperes peak forward surge current megahertz all semiconductor device diode
Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Terminal Type And Quantity
10 pin
Specification Data
81349-mil-s-19500/474 government specification
NSN
5961-01-308-6670
Part Number
JAN1N5772
Description
Semiconductor Devices,unitized
CAGE

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part JAN1N5772 NSN 5961-01-308-6670

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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