Model: JAN1N5550

Diode Semiconductor Device

Special Features:

Item must comply with requirements of defense electronics supply center production standard no. L02795; for navy nuclear propulsion plant products only; junction pattern arrangement: pn

Properties:

Inclosure Material
Glass
Overall Length
Between 0.130 inches and 0.260 inches
Terminal Length
Between 0.900 inches and 1.250 inches
Overall Diameter
Between 0.145 inches and 0.250 inches
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Criticality Code Justification
Feat
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 working peak reverse voltage, peak total value
Current Rating Per Characteristic
50.00 amperes forward current, average preset
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius ambient air
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-079-4504
Part Number
JAN1N5550
Description
Semiconductor Device,diode
CAGE
12969

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JAN1N5550 NSN 5961-01-079-4504

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
Y

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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