Model: JAN1N3315RB

Diode Semiconductor Device

Properties:

Inclosure Material
Metal
Overall Length
0.450 inches
Overall Diameter
0.667 inches
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Overall Width Across Flats
0.677 inches
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
16.8 breakdown voltage, dc
Current Rating Per Characteristic
2970.00 milliamperes repetitive peak forward current
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius case
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud and 1 tab, solder lug
NSN
5961-01-371-6261
Part Number
JAN1N3315RB
Description
Semiconductor Device,diode
CAGE
81349

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part JAN1N3315RB NSN 5961-01-371-6261

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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