Model: IXFN26N100P

Transistor

Properties:

Inclosure Material
Metal
Internal Configuration
Field effect
Voltage Rating In Volts Per Characteristic
1000.0 drain to source voltage
Current Rating Per Characteristic
65.00 amperes forward current, average any acceptable
Power Rating Per Characteristic
595.0 watts small-signal input power, common-emitter peak
NSN
5961-01-573-6033
Part Number
IXFN26N100P
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IXFN26N100P NSN 5961-01-573-6033

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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