Model: IVN5201KNF

Transistor

Properties:

Overall Length
0.375 inches
Overall Diameter
0.875 inches
Mounting Facility Quantity
2
Internal Configuration
Field effect
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-3
Mounting Method
Unthreaded hole
Voltage Rating In Volts Per Characteristic
80.0 drain to gate voltage and 80.0 drain to source voltage
Current Rating Per Characteristic
12.00 amperes drain current
Power Rating Per Characteristic
50.0 watts total device dissipation
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Terminal Type And Quantity
2 uninsulated wire lead and 1 case
NSN
5961-01-158-1544
Part Number
IVN5201KNF
Description
Transistor
CAGE
32293

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IVN5201KNF NSN 5961-01-158-1544

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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