Model: ISMB12AT3

Diode Semiconductor Device

Properties:

Inclosure Material
Plastic
Overall Length
Between 5.2 millimeters and 5.6 millimeters
Overall Height
Between 1.9 millimeters and 2.4 millimeters
Overall Width
Between 3.3 millimeters and 3.8 millimeters
Function For Which Designed
Transient suppressor and zener diode
Mounting Method
Terminal
Voltage Rating In Volts Per Characteristic
13.3 breakdown voltage, dc
Current Rating Per Characteristic
30.20 amperes source cutoff current universal
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-457-3568
Part Number
ISMB12AT3
Description
Semiconductor Device,diode
CAGE
04713

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part ISMB12AT3 NSN 5961-01-457-3568

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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