Model: IRGB4062DPBF

Transistor

Special Features:

Insulated gate bipolar transistor with ultrafast soft recovery diode. Not recommended for surface mount application.

Properties:

Overall Length
0.420 inches
Terminal Length
0.580 inches
Overall Height
1.210 inches
Overall Width
0.190 inches
Function For Which Designed
Rectifier
End Application
Remote monitoring and logging system (rmls)
Voltage Rating In Volts Per Characteristic
600.0 collector to emitter voltage, dc
Power Rating Per Characteristic
125.0 watts total power dissipation and 250.0 watts total power dissipation
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
NSN
5961-01-653-2159
Part Number
IRGB4062DPBF
Description
Transistor
CAGE
81483

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IRGB4062DPBF NSN 5961-01-653-2159

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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