Model: IRFP260N-203

Transistor

Properties:

Inclosure Material
Ceramic
Overall Length
20.30 millimeters
End Application
Advanced hawkeye
Mounting Facility Quantity
1
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 gate to source voltage
Current Rating Per Characteristic
50.0 amperes drain current
Power Rating Per Characteristic
300.0 watts total power dissipation
Part Name Assigned By Controlling Agency
Transistor, mosfet
Terminal Type And Quantity
3 solder stud
NSN
5961-01-630-7327
Part Number
IRFP260N-203
Description
Transistor
CAGE
81483

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IRFP260N-203 NSN 5961-01-630-7327

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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