Special Features:

N channel power mosfet, avalanche rugged technology, rugged gate oxide technology, lower input capacitance, improved gate charge, extended safe operating area

Properties:

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.