Model: IRFIBC30G
TransistorSpecial Features:
Isolated package; high voltage isolation=2.5 kvrms; sink to lead creepage dist=4.8mm; dynamic dv/dt rating; low thermal resistance; lead free; the to-220 fullpak eliminates the need for additional insulating hardware in commercial-industrial applications; the moulding compound used provides a high isolation capability and a low themal resistance between the tap and externa heatsink; this isolation is equivalent to using a 100 micron mica barrier with standard to-220 product the fullpak is mounted to a heatsink using a single clip or by a single screw fixing
Properties:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
Part IRFIBC30G NSN 5961-01-538-0422
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPricing & Availability Check
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Schedule B and Export
- Schedule B: 8541500080
- SITC: 77639
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Semiconductor devices, nesoi
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