Model: IRF840PBF

Transistor

Special Features:

Mosfet

Properties:

Mounting Facility Quantity
1
Internal Configuration
Junction contact
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
500.0 emitter to base voltage, instantaneous not applicable
Current Rating Per Characteristic
5.10 amperes drain current and 8.00 amperes drain current
Power Rating Per Characteristic
125.0 watts off-state power dissipation
Maximum Operating Tempurature Per Measurement Point
150.0 inlet swivel per square yard
Terminal Type And Quantity
3 pin
NSN
5961-01-575-3148
Part Number
IRF840PBF
Description
Transistor
CAGE
18612

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IRF840PBF NSN 5961-01-575-3148

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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