Model: IRF640N

Transistor

Properties:

Overall Length
Between 0.724 inches and 0.760 inches
Overall Width
Between 0.405 inches and 0.415 inches
Mounting Facility Quantity
1
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source
Current Rating Per Characteristic
18.00 amperes emitter current, dc peak
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-531-2796
Part Number
IRF640N
Description
Transistor
CAGE
59993

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IRF640N NSN 5961-01-531-2796

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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