Model: IRF620

Transistor

Properties:

Inclosure Material
Ceramic
Overall Length
15.8 millimeters
Overall Width
10.6 millimeters
Internal Configuration
Field effect
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
200.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source
Current Rating Per Characteristic
100.00 amperes off-state current, peak
Power Rating Per Characteristic
40.0 watts peak gate power dissipation
Terminal Type And Quantity
3 pin
NSN
5961-01-439-4650
Part Number
IRF620
Description
Transistor
CAGE
59993

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IRF620 NSN 5961-01-439-4650

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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