Model: IRF5305 HEXFET TO-220

Transistor

Properties:

Inclosure Material
Plastic
Overall Length
0.650 inches
Overall Height
0.115 inches
Overall Width
0.420 inches
Mounting Facility Quantity
1
Internal Configuration
Field effect
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
55.0 drain to gate voltage
Current Rating Per Characteristic
10.00 amperes source cutoff current of standard range
Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector preset
Terminal Type And Quantity
3 pin
NSN
5961-01-516-2233
Part Number
IRF5305 HEXFET TO-220
Description
Transistor
CAGE
59993

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IRF5305 HEXFET TO-220 NSN 5961-01-516-2233

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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