Model: IDT70V659S12DRI

Memory Microcircuit

Properties:

Operating Tempurature Range
-40.0 to 85.0 degrees celsius
End Application
B-1 bomber
Inclosure Configuration
Pin grid array
Part Name Assigned By Controlling Agency
High-speed 3.3v 128/64/32k x 36 asynchronus dual-port static ram
Voltage Rating And Type Per Characteristic
3.3 volts total supply
Memory Device Type
Ram
Memory Capacity
128
Terminal Type And Quantity
208 pin
NSN
5962-01-618-8819
Part Number
IDT70V659S12DRI
Description
Microcircuit,memory
CAGE
61772

A circuit designed to store information and/or coded instructions for later use. Item has pins or other connections to install in a computer or computing device. does not include magnetic drums, tapes, punched cards or the like. for items that have portable type connections see memory, portable, solid state.

Part IDT70V659S12DRI NSN 5962-01-618-8819

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
41015
FIIG:
A458A0
Concept No.:
1
App. Key:
F
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
061045
UFC:
34580
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8542900000
  • SITC: 77689
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Electronic integrated circuits and microassembly parts

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