Model: IB1214M370

Transistor

Special Features:

The high power radar transistor device is designed for l-band radar systems operating over the instantaneous bandwidth of 1.210-1.400 ghz, while operating in class c mode this common base device supplies a of 370 watts of peak pulse power

Properties:

Semiconductor Material
Silicon
NSN
5961-01-569-3427
Part Number
IB1214M370
Description
Transistor
CAGE
1CXL4

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part IB1214M370 NSN 5961-01-569-3427

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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