Model: HSCH-5331

Diode Semiconductor Device

Special Features:

Platinum tri-metal system; silicon nitride passivated; low barrier; packaged 20 units; 20 ohm max dynamic reistance; suited for stripline or microline circuits; dc tested; 4 volt min breakdown

Properties:

Voltage Rating In Volts Per Characteristic
375.0 emitter to collector voltage, floating potential, dc with base biased in reverse direction with respect to the collector not applicable and 400.0 reach through voltage not applicable
Capacitance Rating In Picofarads
0.1
Maximum Operating Tempurature Per Measurement Point
175.0 inlet swivel degrees fahrenheit
Part Name Assigned By Controlling Agency
Beam lead schottky dc tested diode
Precious Material And Location
Leads gold
Precious Material
Gold
NSN
5961-01-575-9865
Part Number
HSCH-5331
Description
Semiconductor Device,diode
CAGE
50434

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part HSCH-5331 NSN 5961-01-575-9865

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
G
ESD:
B
ESD:
B
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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