Model: HFET2202

Transistor

Properties:

Inclosure Material
Ceramic and metal
Overall Length
0.100 inches
Overall Height
0.042 inches
Overall Width
0.100 inches
Mounting Method
Press fit
Features Provided
Hermetically sealed case
Semiconductor Material
Gallium arsenide
Voltage Rating In Volts Per Characteristic
4.0 drain to source voltage
Current Rating Per Characteristic
1.50 milliamperes zero-gate-voltage source current horsepower metric
Terminal Type And Quantity
2 tab, solder lug and 2 ribbon
NSN
5961-01-171-9516
Part Number
HFET2202
Description
Transistor
CAGE
1MY97

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part HFET2202 NSN 5961-01-171-9516

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
--
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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