Model: HDB10

Diode Semiconductor Device

Properties:

Inclosure Material
Glass
Overall Length
1.050 inches
Overall Diameter
1.900 inches
Mounting Facility Quantity
1
Mounting Method
Threaded hole
Thready Qty Per Inch (tpi)
28
Thread Size
0.250 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
10000.0 repetitive peak reverse voltage
Current Rating Per Characteristic
1.20 amperes forward current, average
Thread Series Designator
Unf
Terminal Type And Quantity
1 threaded stud
NSN
5961-01-449-6075
Part Number
HDB10
Description
Semiconductor Device,diode
CAGE
59635

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part HDB10 NSN 5961-01-449-6075

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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