Model: GES5307

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Length
Between 0.170 inches and 0.210 inches
Terminal Length
0.500 inches
Overall Height
Between 0.175 inches and 0.205 inches
Overall Width
Between 0.125 inches and 0.165 inches
Internal Configuration
Junction contact-darlington connected
Mounting Method
Terminal
Terminal Circle Diameter
Between 0.095 inches and 0.105 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
40.0 collector to base voltage/static/emitter open and 40.0 collector to emitter voltage, dc and 12.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
300.00 milliamperes source cutoff current and 50.00 milliamperes source cutoff current
Power Rating Per Characteristic
900.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-136-7013
Part Number
GES5307
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part GES5307 NSN 5961-01-136-7013

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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