Model: FX1N6159

Diode Semiconductor Device

Special Features:

Low dynamic impedance; hermetically sealed in metoxillite fused metal oxide; 1500 watt peak pulse power; 7.5 watt continuous; axial leaded; high reliability

Properties:

Inclosure Material
Ceramic
Overall Length
Between 1.940 inches and 2.785 inches
Overall Width
Between 0.135 inches and 0.185 inches
Features Provided
Hermetically sealed case
Voltage Rating In Volts Per Characteristic
45.9 breakdown voltage, dc
Current Rating Per Characteristic
5.00 microamperes forward current, average peak
NSN
5961-01-474-3668
Part Number
FX1N6159
Description
Semiconductor Device,diode
CAGE
SH879

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part FX1N6159 NSN 5961-01-474-3668

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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