Model: FSA2501P
Semiconductor Device AssemblySpecial Features:
Semiconductor device diode array working peak reverse voltage 75 v, dc forward current 400 ma, peak forward surge current 2.0a, power dissipataion per junction at 25 degrees c 500 mw
Properties:
A grouping of two or more semiconducting devices such as light emitting diode; semiconductor device, diode; semiconductor device, photo; semiconductor device, thyristor; and/or transistor mounted on a common mounting or mounted on each other. The devices must be separable and each item must be capable of functioning in accordance with its given name. For assemblies consisting of semiconducting devices permanently cased, encapsulated, or potted together to form a single unit, see rectifier, semiconductor device, unitized and semiconductor devices, unitized. Excludes semiconductor device set; microcircuit assembly; and microcircuit set. See also absorber, overvoltage.
Part FSA2501P NSN 5961-01-545-6286
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsFreight Classification
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Schedule B and Export
- Schedule B: 8541500080
- SITC: 77639
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Semiconductor devices, nesoi
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