Model: FQB7N60TM

Transistor

Properties:

Voltage Rating In Volts Per Characteristic
600.0 drain to source voltage
Current Rating Per Characteristic
7.4 amperes drain current
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius ambient air
Part Name Assigned By Controlling Agency
N-channel qfet mosfet
NSN
5961-01-643-8324
Part Number
FQB7N60TM
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part FQB7N60TM NSN 5961-01-643-8324

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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