Model: FN2333

Transistor

Properties:

Inclosure Material
Metal
Overall Length
0.230 inches
Terminal Length
0.500 inches
Overall Height
0.210 inches
Internal Configuration
Field effect
Electrode Internally-electrically Connected To Case
Source
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 drain to source voltage and 20.0 drain to gate voltage and 20.0 gate to source voltage
Current Rating Per Characteristic
0.60 amperes drain current
Power Rating Per Characteristic
1.2 watts total device dissipation
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-033-6599
Part Number
FN2333
Description
Transistor
CAGE
17856

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part FN2333 NSN 5961-01-033-6599

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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