Model: FMB2227A

Unitized Semiconductor Devices

Special Features:

Case: super sot-6; transistor type: c1, b1, e1: npn; c2, b2, e2: pnp; operating and storage junction temp range: -55.0 to +150.0 degrees c

Properties:

Inclosure Material
Plastic
Overall Length
Between 2.8 millimeters and 3.0 millimeters
Overall Height
1.1 millimeters
Overall Width
Between 1.5 millimeters and 1.7 millimeters
End Application
Ca70608-0019191560, receiver-transmitter
Joint Electronic Device Engineering Council/jedec/case Outline Designation
Mo-193, var. Aa, issue c, dated january 2000
Component Name And Quantity
2 transistor
Mounting Method
Press fit
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
30.0 collector to emitter voltage, dc all transistor and 60.0 collector to base voltage, dc all transistor and 5.0 emitter to base voltage, dc all transistor
Current Rating Per Characteristic
500.00 milliamperes collector current, dc all transistor
Power Rating Per Characteristic
700.0 milliwatts total power dissipation all transistor
Part Name Assigned By Controlling Agency
Dwg - cage 19156: transistor array, general purpose amplifier; datasheet - cage 7d893: npn and pnp general purpose amplifier
Terminal Type And Quantity
6 tab, solder lug
NSN
5961-01-580-9270
Part Number
FMB2227A
Description
Semiconductor Devices,unitized
CAGE

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part FMB2227A NSN 5961-01-580-9270

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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