Model: FJT1101

Diode Semiconductor Device

Special Features:

21 nov 00; girder project, zg non-concur to cancellation action; junction pattern arrangement: pn

Properties:

Inclosure Material
Glass
Overall Length
Between 0.230 inches and 0.275 inches
Terminal Length
1.000 inches
Overall Diameter
0.105 inches
Joint Electronic Device Engineering Council/jedec/case Outline Designation
D07-1
Mounting Method
Terminal
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
15.0 working peak reverse voltage, peak total value
Current Rating Per Characteristic
150.00 milliamperes source cutoff current preset
Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
175.0 degrees celsius junction
Terminal Type And Quantity
2 uninsulated wire lead
NSN
5961-01-069-7726
Part Number
FJT1101
Description
Semiconductor Device,diode
CAGE
27014

A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes light emitting diode and semiconductor device,photo. For items containing material such as selenium and copper oxide, see recifier, metallic.

Part FJT1101 NSN 5961-01-069-7726

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20589
FIIG:
A110A0
Concept No.:
1
App. Key:
B
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541100070
  • SITC: 77631
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less

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