Model: FET-1

Transistor

Properties:

Overall Height
Between 0.170 inches and 0.210 inches
Overall Diameter
Between 0.175 inches and 0.205 inches
Internal Configuration
Field effect
Overall Width Across Flats
Between 0.125 inches and 0.165 inches
Semiconductor Material
Silicon
Power Rating Per Characteristic
200.0 milliwatts total power dissipation
Terminal Type And Quantity
3 uninsulated wire lead
NSN
5961-01-030-7247
Part Number
FET-1
Description
Transistor
CAGE
03508

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part FET-1 NSN 5961-01-030-7247

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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