Model: FDS8935

Transistor

Special Features:

Description: transistor, -80v, 2.1a, 183 mohms, dual p-channel, power trench mosfet, lead free; operating and storage temperature: -55deg c to +150deg c rohs complaint

Properties:

Part Name Assigned By Controlling Agency
Semiconductor devic; fds8935 dual p-channel power trend mosfet -80v, -2.1a, 183 mohms
Terminal Type And Quantity
8 pin
NSN
5961-01-645-1884
Part Number
FDS8935
Description
Transistor
CAGE
89305

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part FDS8935 NSN 5961-01-645-1884

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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