Model: FBN-L197

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Length
1.251 inches
Terminal Length
0.359 inches
Overall Height
0.296 inches
Overall Width
0.700 inches
Internal Configuration
Junction contact-double emitter
Joint Electronic Device Engineering Council/jedec/case Outline Designation
To-66
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
500.0 collector to base voltage/static/emitter open and 400.0 collector-to-emitter, substaining voltage, base open-circuited and 7.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
0.25 amperes emitter current, dc and 2.50 amperes emitter current, dc blank
Power Rating Per Characteristic
40.0 watts any acceptable absolute
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius case
Terminal Type And Quantity
2 pin and 1 case
NSN
5961-01-226-5049
Part Number
FBN-L197
Description
Transistor
CAGE
80103

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part FBN-L197 NSN 5961-01-226-5049

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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