Model: F1070

Transistor

Special Features:

8gold metalized; package style - ah; high efficiency; linear; high gain; junction temperature plus 200.0 degrees c; storage temperature minus 65.0 to plus 150.0 degrees c; designed specifically for broadband radio frequency (rf) applications

Properties:

Inclosure Material
Metal
Overall Length
1.200 inches
Overall Height
0.200 inches
Overall Width
0.550 inches
Mounting Facility Quantity
2
Mounting Method
Slot
Features Provided
Low noise
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
70.0 drain to gate voltage and 70.0 drain to source voltage and 30.0 gate to source voltage
Current Rating Per Characteristic
16.00 amperes source cutoff current of standard range
Power Rating Per Characteristic
350.0 watts small-signal input power, common-collector absolute
Part Name Assigned By Controlling Agency
Silicon rf power, vdmos transistor
Terminal Type And Quantity
2 tab, solder lug
NSN
5961-01-514-2181
Part Number
F1070
Description
Transistor
CAGE
1HW28

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part F1070 NSN 5961-01-514-2181

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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