Model: ECG285MCP

Semiconductor Device Set

Properties:

Inclosure Material
Metal all transistor
Overall Height
0.350 inches all transistor
Overall Diameter
0.875 inches all transistor
Function For Which Designed
Amplifier
Mounting Facility Quantity
2 all transistor
Joint Electronic Device Engineering Council/jedec/case Outline Designation
T0-3 all transistor
Component Function Relationship
Matched
Component Name And Quantity
2 transistor
Mounting Method
Unthreaded hole all transistor
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
180.0 collector to base voltage/static/emitter open all transistor
Current Rating Per Characteristic
16.00 amperes zero-gate-voltage source current blank all transistor
Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector all transistor
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction all transistor
Terminal Type And Quantity
2 pin all transistor
NSN
5961-01-521-1582
Part Number
ECG285MCP
Description
Semiconductor Device Set
CAGE

A grouping of two or more individual semiconductor devices, such as transistors, diodes, and photo semiconductor devices. It includes matched pairs. Excludes absorber, overvoltage; semiconductor device assembly. For interconnected items functioning as power supply rectifiers, see rectifier, semiconductor device.

Part ECG285MCP NSN 5961-01-521-1582

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20590
FIIG:
A110A0
Concept No.:
App. Key:
F
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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