Model: E1B6

Transistor

Properties:

Inclosure Material
Ceramic and metal
Overall Length
0.128 inches
Overall Diameter
0.204 inches
End Application
Remote system monitor (rsm)
Mounting Facility Quantity
1
Mounting Method
Threaded stud
Features Provided
Gold plated leads and hermetically sealed case
Thread Size
0.505 inches
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 collector to emitter voltage, dc with base short-circuited to emitter and 4.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
0.250 amperes all primaries
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
Thread Series Designator
Unc
Terminal Type And Quantity
2 uninsulated wire lead and 1 threaded stud
NSN
5961-01-104-6043
Part Number
E1B6
Description
Transistor
CAGE
50155

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part E1B6 NSN 5961-01-104-6043

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
N

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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