Model: DV2820W

Transistor

Properties:

Function For Which Designed
Amplifier
Internal Configuration
Field effect
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 gate to source voltage and 80.0 drain to source voltage and 80.0 drain to gate voltage and 80.0 breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 2.0 gate to source threshold voltage and 6.0 gate to source threshold voltage
Current Rating Per Characteristic
2.00 amperes drain current and 1.80 amperes on-state drain current
Power Rating Per Characteristic
40.0 watts total device dissipation
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
NSN
5961-01-310-9404
Part Number
DV2820W
Description
Transistor
CAGE
50998

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part DV2820W NSN 5961-01-310-9404

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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