Model: DV2805W

Transistor

Properties:

Inclosure Material
Ceramic
Internal Configuration
Field effect
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
20.0 gate to source voltage and 80.0 drain to source voltage and 80.0 drain to gate voltage
Current Rating Per Characteristic
0.50 amperes drain current
Power Rating Per Characteristic
10.0 watts total device dissipation
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius junction
NSN
5961-01-310-9403
Part Number
DV2805W
Description
Transistor
CAGE

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part DV2805W NSN 5961-01-310-9403

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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