Model: DM100P

Transistor

Special Features:

Junction pattern arrangement: npn

Properties:

Inclosure Material
Ceramic
Overall Length
0.225 inches
Overall Height
0.225 inches
Overall Width
0.355 inches
End Application
Instrument landing system (ils)
Mounting Facility Quantity
2
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Unthreaded hole
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
50.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
8.00 amperes all primaries
Power Rating Per Characteristic
75.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point
200.0 degrees celsius ambient air
Terminal Type And Quantity
2 tab, solder lug
NSN
5961-01-031-0134
Part Number
DM100P
Description
Transistor
CAGE
50155

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part DM100P NSN 5961-01-031-0134

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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