Model: DA3F3

Transistor
Description:

Metal inclosure material, 0.750 inches overall length, 1.110 inches overall diameter, 1 mounting facility quantity, junction contact internal configuration.

Special Features:

Junction pattern arrangement: pnp

Properties:

Inclosure Material
Metal
Overall Length
0.750 inches
Overall Diameter
1.110 inches
Mounting Facility Quantity
1
Internal Configuration
Junction contact
Electrode Internally-electrically Connected To Case
Collector
Mounting Method
Threaded stud
Features Provided
Hermetically sealed case
Thread Size
0.250 inches
Semiconductor Material
Germanium
Voltage Rating In Volts Per Characteristic
60.0 breakdown voltage, collector-to-base, emitter open and 35.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic
2.50 amperes source cutoff current
Maximum Operating Tempurature Per Measurement Point
95.0 degrees celsius junction
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 case
NSN
5961-00-061-2987
Part Number
DA3F3
Description
Transistor
CAGE
53399

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part DA3F3 NSN 5961-00-061-2987

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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