Model: D1197TH18NEFN/YO

Thyristor Semiconductor Device

Properties:

Overall Length
Between 1.000 inches and 1.060 inches
Mounting Method
Compression
Voltage Rating In Volts Per Characteristic
500.0 repetitive peak reverse voltage and 1800.0 repetitive peak off-state voltage
NSN
5961-01-379-6787
Part Number
D1197TH18NEFN/YO
Description
Semiconductor Device,thyristor
CAGE
64481

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part D1197TH18NEFN/YO NSN 5961-01-379-6787

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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