Model: CXT3019

Transistor

Special Features:

Sot-89 case; manufactured by the epitaxial planar process, epoxy molded; designed for high current general purpose amplifier applications

Properties:

Overall Length
Between 0.173 inches and 0.185 inches
Overall Height
Between 0.055 inches and 0.067 inches
Overall Width
Between 0.146 inches and 0.177 inches
Function For Which Designed
Amplifier
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
140.0 collector to base voltage/static/emitter open and 80.0 collector to emitter voltage/static/base open and 7.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic
1.00 amperes source cutoff current
Power Rating Per Characteristic
1.2 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point
150.0 degrees celsius junction
Part Name Assigned By Controlling Agency
Surface mount npn silicon transistor
NSN
5961-01-535-1428
Part Number
CXT3019
Description
Transistor
CAGE
55464

An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part CXT3019 NSN 5961-01-535-1428

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20588
FIIG:
A110A0
Concept No.:
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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