Model: CX779
U Semiconductor Device RectifierSpecial Features:
X8ea 1n5416 forming two separate bridges; 2ea 1n5416 forming a center tap; 2ea 1n5418 forming a center tap; 2ea 1n5418 forming an inverted center tap.; additional styles are: a7 (bridge 1 phase) and a10 (inverted center tap 1 phase)
Properties:
Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
Part CX779 NSN 5961-00-411-3012
Material Classification
Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicatorsPackaging & Shipping
Freight Classification
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Schedule B and Export
- Schedule B: 8541900000
- SITC: 77688
- End Use: Semiconductors
- NAICS: 334413
- USDA: 1
Freight Class: Diode, transistor & similar semiconductor device parts
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