Model: CNY51

Photo Semiconductor Device

Special Features:

Junction pattern arrangement: npn

Properties:

Overall Length
Between 0.330 inches and 0.350 inches
Overall Height
0.185 inches
Overall Width
Between 0.225 inches and 0.280 inches
Mounting Method
Terminal
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
70.0 collector to emitter voltage, dc
Current Rating Per Characteristic
60.00 milliamperes source cutoff current preset
Terminal Type And Quantity
6 pin
NSN
5961-01-256-5989
Part Number
CNY51
Description
Semiconductor Device,photo
CAGE
09214

A semiconductor device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes semiconductor device (1), diode; semiconductor device (1), thyristor and transistor. For solid state devices which emit visible or infrared radiant energy, see light emitting diode.

Part CNY51 NSN 5961-01-256-5989

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
20587
FIIG:
A110A0
Concept No.:
1
App. Key:
C
Cond. Code:
2
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
A
ESD:
A
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541409500
  • SITC: 77637
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Photosensitive semiconductor devices, nesoi

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