Model: CA3096AE

Unitized Semiconductor Devices

Special Features:

All transistor junction pattern arrangement: pnp

Properties:

Inclosure Material
Plastic
Overall Length
Between 0.745 inches and 0.785 inches
Terminal Length
Between 0.145 inches and 0.200 inches
Overall Height
Between 0.280 inches and 0.350 inches
Overall Width
0.300 inches
Joint Electronic Device Engineering Council/jedec/case Outline Designation
Mo-001-ac
Component Name And Quantity
5 transistor
Mounting Method
Terminal
Semiconductor Material
Silicon all transistor
Voltage Rating In Volts Per Characteristic
-40.0 breakdown voltage, collector-to-base, emitter open all transistor and -40.0 breakdown voltage, collector-to-emitter, base open all transistor and -40.0 breakdown voltage, emitter-to-base, collector open all transistor
Current Rating Per Characteristic
-40.00 nanoamperes zero-gate-voltage source current preset all transistor and -100.00 nanoamperes zero-gate-voltage source current absolute all transistor
Transfer Ratio
40.0 static forward current transfer ratio, common-emitter all transistor and 200.0 static forward current transfer ratio, common-emitter all transistor
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius ambient air
Terminal Type And Quantity
14 ribbon
NSN
5961-01-269-3102
Part Number
CA3096AE
Description
Semiconductor Devices,unitized
CAGE
02734

Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see microcircuit (as modified). Excludes network (as modified); absorber, overvoltage; semiconductor device set; and semiconductor device assembly. Do not use if more specific name applies.

Part CA3096AE NSN 5961-01-269-3102

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
61962
FIIG:
A110A0
Concept No.:
App. Key:
E
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
B
ESD:
B
MMAC:
EH
CRITL:
X

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
O
SPI No.:
SPI Rev.:
SPC Mkg:
ZZ
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
72D
TCC:
3
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541500080
  • SITC: 77639
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Semiconductor devices, nesoi

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