Model: C385MX46

Thyristor Semiconductor Device

Properties:

Inclosure Material
Ceramic
Overall Length
0.550 inches
Overall Diameter
1.500 inches
Mounting Method
Compression
Features Provided
Hermetically sealed case
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
600.0 off-state voltage, rms total
Current Rating Per Characteristic
400.00 amperes drain current nanoamperes
Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector peak
Maximum Operating Tempurature Per Measurement Point
125.0 degrees celsius junction
Terminal Type And Quantity
2 tab, solder lug
NSN
5961-01-016-8487
Part Number
C385MX46
Description
Semiconductor Device,thyristor
CAGE
03508

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part C385MX46 NSN 5961-01-016-8487

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
U
ESD:
ESD:
MMAC:
CRITL:
X

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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