Model: C139N10M

Thyristor Semiconductor Device

Special Features:

Weapon system essential

Properties:

Inclosure Material
Metal
Overall Length
1.308 inches
End Application
Kidd class ddg; virginia class cgn (41); 2m/ate microminiauture automatic test equipment; aircraft, (ac-130h, mc-130h, ec-130e, hc-130); ticonder
Mounting Facility Quantity
1
Electrode Internally-electrically Connected To Case
Anode
Mounting Method
Threaded stud
Overall Width Across Flats
Between 0.424 inches and 0.437 inches
Thread Size
0.190 inches
Criticality Code Justification
Feat
Semiconductor Material
Silicon
Voltage Rating In Volts Per Characteristic
800.0 breakover voltage, dc
Current Rating Per Characteristic
2.00 amperes source cutoff current preset
Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector blank
Maximum Operating Tempurature Per Measurement Point
100.0 degrees celsius junction
Test Data Document
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Thread Series Designator
Unf
Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
Specification Data
81349-mil-s-19500/372 government specification
NSN
5961-00-439-3731
Part Number
C139N10M
Description
Semiconductor Device,thyristor
CAGE
03508

A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.

Part C139N10M NSN 5961-00-439-3731

INC
FIIG
Concept No.
App. Key
Cond. Code
Status
INC:
33096
FIIG:
A110A0
Concept No.:
1
App. Key:
D
Cond. Code:
1
Status:
A

Material Classification

Hazardous material, precious metals, criticality, enviroment, and electrostatic discharge indicators
HMIC
PMIC
ESD/EMI
ENAC
MMAC
CRITL
HMIC:
N
PMIC:
A
ESD:
ESD:
MMAC:
CRITL:
Y

Packaging & Shipping

Est. Pack Size
Est. Pack Weight
Est. Item Weight
Est. Item Dim.
Pack Size:
--
Paclk Weight:
0.1000lbs
Item Weight:
--
Item Dim:
--
OPI
SPI No.
SPI Rev.
SPC Mkg.
LVL A
LVL B
OPI:
SPI No.:
SPI Rev.:
SPC Mkg:
00
LVL_A:
Q
LVL_B:
Q

Freight Classification

NMFC
UFC
LTL
LCL
WCC
TCC
SHC
ACC
NMFC:
063025
UFC:
34525
LTL:
RATING VARIABLE
LCL:
--
WCC:
658
TCC:
Z
SHC:
9
ACC:
Instruments/Radio

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Schedule B and Export
  • Schedule B: 8541300080
  • SITC: 77635
  • End Use: Semiconductors
  • NAICS: 334413
  • USDA: 1

Freight Class: Thyristors, diacs & triacs, other than photosensitive devices, nesoi

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